6
RF Device Data
Freescale Semiconductor
MRF6P18190HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-- 6 0
-- 1 0
0.01
7th Order
TWO--TONE SPACING (MHz)
VDD
=28Vdc,Pout
= 190 W (PEP), IDQ
= 2000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1842.5 MHz
5th Order
3rd Order
-- 2 0
-- 3 0
-- 4 0
-- 5 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
Figure 8. Pulsed CW Output Power versus
Input Power
44
60
33 35 37 39 41 4334
P3dB = 54.13 dBm (258.82 W)
Pin, INPUT POWER (dBm)
VDD
=28Vdc,IDQ
= 2000 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1842.5 MHz
57
55
53
48
36 38 40 42
Actual
Ideal
59
49
32
P
out
, OUTPUT POWER (dBm)
51
IM3 (dBc), ACPR (dBc)
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
-- 1 0 -- 5 525_C
85_C
Pout, OUTPUT POWER (WATTS) AVG. W--CDMA
40
-- 3 0
30
20
-- 3 5
-- 4 0
0--50
-- 3 0_C
1 10 150100
-- 4 5
10
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IM3
ηD
Gps
ACPR
500
11
18
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 2000 mA
f = 1842.5 MHz
100
10
16
15
14
13
12
C
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
350
7
17
35
16
10
8
70 105 175 245140
210 280 315
13
14
VDD
=24V
IDQ
= 2000 mA
f = 1842.5 MHz
32 V
VDD=28Vdc,IDQ
= 2000 mA
f1 = 1837.5 MHz, f2 = 1847.5 MHz
2--Carrier W--CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
1
0
56
54
52
50
0.1
P1dB = 53.51 dBm (224.38 W)
58
TC
=25_C
25_C
-- 3 0_C
85_C
TC
=--30_C
85_C
25_C
-- 3 0_C
17
60
25_
85_C
15
12
11
9
28 V
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
发布紧急采购，3分钟左右您将得到回复。
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功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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MRF6P21190HR6_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
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MRF6P23190HR5
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MRF6P23190HR6
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MRF6P24190HR5
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